Influence of Substrate Temperature on Silicon Nitride Films Deposited by R.F. Magnetron Sputtering


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Silicon Nitride thin films were deposited on glass substrates by r.f. magnetron sputtering with a mixture gas of N2 and Ar. The properties of the thin films vs substrate temperature have been investigated. The phase structure, surface morphology, chemical composition, thickness and optical properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS), ultraviolet-visible spectroscopy (UV-Vis) and nkd-system spectrophotometer. The results show that the films appear amorphous and crystalline structure at the substrate temperature of 20 and 300 , respectively, the atomic ratio of Si to N of the films is nearly 1:1, the transmittance in the ultraviolet-visible region is above 75%; with increasing substrate temperature the refractive index and the optical band gap increase, and the deposition rates of the films decreases.



Advanced Materials Research (Volumes 150-151)

Edited by:

Jinglong Bu, Zhengyi Jiang and Sihai Jiao




F. Gao et al., "Influence of Substrate Temperature on Silicon Nitride Films Deposited by R.F. Magnetron Sputtering", Advanced Materials Research, Vols. 150-151, pp. 1391-1395, 2011

Online since:

October 2010




[1] Gang Xu, Ping Jin, Masato Tazawa, et al. Thin Solid Films. 425 (2003) 196.

[2] H Mztsumura, Jpn. J. Appl. Phys. 28 (1989) 2157.

[3] C.S. McCormic, C.E. Weber, J.R. Abelson, et al. J. Vac. Sci. Technol. 15 (1997) 2770.

[4] Y. Murayama, T. Takao, Thin Solid Films. 40 (1977) 309.

[5] M.F. lambrinos, R Valizadeh, J.S. Colligon, Appl. Opt. 35(1996) 3620.

[6] I. Umezu, K. Kohno, T. Yamaguchi, A. Sugimura, J. Vac. Sci. Technol. A 20 (2002) 30.

[7] J.S. Yoon, C.V. Deshp, R.F. Bunshah, Thin Solid Films. 220 (1992) 80.

[8] J.H. Kim, K.W. Chung, J. Appl. Phys. 83 (1998) 5831.

[9] Weissmantel Chr. Thin Solid Films. 32 (1976) 11.

[10] Mirsch S, Bauer J. Phys Stat Sol (a). 26 (1974) 579.

[11] H.P. Klug, L.E. Alexander (Eds. ), X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials, Wiley, New York, (1954).

[12] Kefei Sun, Ziquan Li, Xin Li, Semiconductor Technology. 32 (2007) 516.

[13] Martinez F L, Prado A D, Martil I, et al. J. Appl. Phys. 86 (1999) (2055).

[14] Wanyu Ding, Jun Xu, Wenqi Lu, et al. Acta Physica Sinica. 57 (2008) 5170.

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