Preparation and Characterization of CuO-Doped ZnO


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ZnO is an important functional semiconductor in application of photoelectric devices. ZnO nano-tubes and the CuO-doped ZnO have been successfully fabricated via hydrothermal method and a solution routine. The samples were characterized by X-ray diffraction, scanning electron microscopy, Fourier transformation infrared spectroscopy and room temperature photoluminescence measurement. The results show that the lattice space (d-value) of the CuO-doped ZnO increases while introducing CuO into its structure. Due to the interaction between Cu2+ and the surface atoms of ZnO, a photoluminescence confinement were observed in the CuO-doped ZnO compared with that of nano ZnO.



Advanced Materials Research (Volumes 152-153)

Edited by:

Zhengyi Jiang, Jingtao Han and Xianghua Liu




Y. Li et al., "Preparation and Characterization of CuO-Doped ZnO", Advanced Materials Research, Vols. 152-153, pp. 847-851, 2011

Online since:

October 2010




[1] K. Raidongia and C. N. R. Rao: J. Phys. Chem. C. Vol. 112 (2008), p.13366.

[2] J. Yang, W. Z. Wang, Y. Ma, D. Z. Wang, D. Steeves, B. Kimball and Z. F. Ren: J. Nanosci. Nanotech. Vol. 6 (2006), p.2196.

[3] Z. W. Pan, Z. R. Dai and Z. L. Wang: Science Vol. 291 (2001), p. (1947).

[4] G. W. She, X. H. Zhang, W. S. Shi, X. Fan, J. C. Chang, C. S. Lee, S. T. Lee and C. H. Liu: Appl. Phys. Lett. Vol. 92 (2008), p.53111.

[5] J. P. Cheng, Y. J. Zhang and R. Y. Guo: J Crystal Growth Vol. 310 (2008), p.57.

[6] Y. J. Chen, C. L. Zhu and G. Xiao: Sensors and Actuators B Vol. 129 (2008), p.639.

[7] T. J. Hsueh and, C. L. Hsu: Sensors and Actuators. B, Chemical Vol. 131 ( 2008), p.572.

[8] Y. S. Zhang, K. Yu, D. S. Jiang, Z. Q. Zhu, H. R. Cheng and L.Q. Luo: Appl. Surf. Sci. Vol. 242 (2005), p.212.

[9] H. J. Fan, R. Scholz, Florian, M. Kolb, M. Zacharias and U. Gosele: Solid State Communications Vol. 130 (2004), p.517.


[10] S. K. Sadrnezhaad and M. R. Vaezi: Mater. Sci. and Eng. B. Vol. 128 (2006), p.53.

[11] G. R. Li, X. H. Lu, W. X. Zhao, C. Y. Su and Y. X. Tong: Crystal Growth & Design Vol. 8 (2008), p.1276.

[12] H. Zhang, R. Xie, T. Sekiguchi, X. Ma and D. Yang: Mater. Res. Bull. Vol. 42 (2007), p.1286.

[13] Y. Fujishiro, M. Awano and S. Kanzaki: Res. Soc. Vol. 737(2003), p.357.

[14] M. H. Zeng, H. Liang and S. M. Shi: Chinese J. Struct. Chem. Vol. 21 (2002), p.541.

[15] M. Q. Zhu, G. Pan, X. L. Li, T. Liu, Y. H. Yang: Acta Phys. Chim. Sin. Vol. 21 (2005), p.1169.

[16] H. Kletnwechter, C. Janzen, J. Knipping, H. Wiggers and P. Roth: J Mater. Sci. Vol. 37 (2002), p.4349.

[17] I. Ardelean, S. Cora and D. Rusu: Phys. B. Vol. 403 (2008), p.3682.

[18] Y. Du, M. S. Zhang, J. Hong, Y. Shen, Q. Chen and Z. Yin: Appl. Phys.A. Vol. 76(2003), p.171.