Evaluation of Static Performance of Optoelectronic Semiconductor Devices under X-Rays Irradiation

Abstract:

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In this research, optoelectronic devices consisted of an infrared light emitting diode and a phototransistor with no special handling or third party-packaging were irradiated to ionizing radiation utilizing x-rays. It was found that the devices under test (DUTs) undergo performance degradation in their functional parameters during exposure to x-rays. These damaging effects are depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The TID effects by x-rays are cumulative and gradually take place throughout the lifecycle of the devices exposed to radiation.

Info:

Periodical:

Edited by:

Zainal Arifin Ahmad, Muhd Ambar Yarmo, Fauziah Haji Abdul Aziz, Dr. Meor Yusoff Meor Sulaiman, Badrol Ahmad, Khairul Nizar Ismail, Nik Akmar Rejab

Pages:

1-6

DOI:

10.4028/www.scientific.net/AMR.173.1

Citation:

H. F. A. Amir and F. P. Chee, "Evaluation of Static Performance of Optoelectronic Semiconductor Devices under X-Rays Irradiation", Advanced Materials Research, Vol. 173, pp. 1-6, 2011

Online since:

December 2010

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$35.00

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