Evaluation of Static Performance of Optoelectronic Semiconductor Devices under X-Rays Irradiation
In this research, optoelectronic devices consisted of an infrared light emitting diode and a phototransistor with no special handling or third party-packaging were irradiated to ionizing radiation utilizing x-rays. It was found that the devices under test (DUTs) undergo performance degradation in their functional parameters during exposure to x-rays. These damaging effects are depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The TID effects by x-rays are cumulative and gradually take place throughout the lifecycle of the devices exposed to radiation.
Zainal Arifin Ahmad, Muhd Ambar Yarmo, Fauziah Haji Abdul Aziz, Dr. Meor Yusoff Meor Sulaiman, Badrol Ahmad, Khairul Nizar Ismail, Nik Akmar Rejab
H. F. A. Amir and F. P. Chee, "Evaluation of Static Performance of Optoelectronic Semiconductor Devices under X-Rays Irradiation", Advanced Materials Research, Vol. 173, pp. 1-6, 2011