Study of Stress in TiO2 Films Grown by Electron-Beam Evaporation

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TiO2 films were fabricated on Si substrate by using electron-beam gun evaporation. Influence of deposition rate, deposition temperature and ion beam bombarding on stress in TiO2 films was studied by AFM and XRD. The results show that deposition temperature of 423K and deposition rate of 0.2nm/s, the average stress in titanium oxide thin films is less than 48.2MPa. The average stress decreases to compressive stress of 16.7MPa from tensile stress of 72.9MPa by the ion beam energy of 113eV and bombarding time of 300s. The microstructure change of TiO2 films is main factors of stress development.

Info:

Periodical:

Advanced Materials Research (Volumes 189-193)

Edited by:

Zhengyi Jiang, Shanqing Li, Jianmin Zeng, Xiaoping Liao and Daoguo Yang

Pages:

1233-1237

DOI:

10.4028/www.scientific.net/AMR.189-193.1233

Citation:

T. Chen et al., "Study of Stress in TiO2 Films Grown by Electron-Beam Evaporation", Advanced Materials Research, Vols. 189-193, pp. 1233-1237, 2011

Online since:

February 2011

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Price:

$38.00

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