Fabrication and Characterization of Transparent P-Type ZnO Films Obtained by In Situ Oxidation of Sputtering Zn3N2 :Al

Abstract:

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Nitrogen and Aluminum co-doped ZnO thin films were prepared by In Situ thermal oxidation of RF magnetron sputtered Zn3N2:Al films on quartz glasses. The structural, optical and electrical properties of the samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical transmittance, photoluminescence (PL) and Hall effect measurements. XRD analyses revealed that Zn3N2:Al films entirely transformed into ZnO films after annealing in oxygen at 500 °C for one hour. Hall effect measurements confirmed p-type conduction in ZnO films with a low resistivity of 34.8Ω cm, a high hole concentration of 3.26×1017 cm-3 and a Hall mobility of 2.3 cm2/Vs. Optical transmission spectra shows that the films are highly transparent in the visible region . Our results demonstrate a promising approach to fabricate low resistivity p-type ZnO.

Info:

Periodical:

Advanced Materials Research (Volumes 194-196)

Edited by:

Jianmin Zeng, Taosen Li, Shaojian Ma, Zhengyi Jiang and Daoguo Yang

Pages:

2435-2439

DOI:

10.4028/www.scientific.net/AMR.194-196.2435

Citation:

J. Zhang et al., "Fabrication and Characterization of Transparent P-Type ZnO Films Obtained by In Situ Oxidation of Sputtering Zn3N2 :Al", Advanced Materials Research, Vols. 194-196, pp. 2435-2439, 2011

Online since:

February 2011

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$35.00

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