Influence of Film Thickness on Dielectric Properties of (Pb0.97La0.02)(Zr0.95Ti0.05)O3 Antiferroelectric Thin Films


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By the sol-gel process, Pb0.97La0.02(Zr0.95Ti0.05)O3 (PLZT) antiferroelectric (AFE) thin films with different thicknesses were successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates. The phase structure of the PLZT antiferroelectric thin films was studied by X-ray diffraction (XRD) analyses. The electric field-induced AFE-FE phase transformation behavior of the PLZT thin films,was examined by polarization versus field (P-E) and relative permittivity versus field (C-E) measurements, with priority focused on thickness-dependent phase switching field. The current by the polarization and depolarization of polar in the PLZT films was measured through current density-electric field (J-E) measurement. With the increase of film thickness, the maximum polarization less and less, the maximum current density is increasing.



Advanced Materials Research (Volumes 194-196)

Edited by:

Jianmin Zeng, Taosen Li, Shaojian Ma, Zhengyi Jiang and Daoguo Yang




J. Liu et al., "Influence of Film Thickness on Dielectric Properties of (Pb0.97La0.02)(Zr0.95Ti0.05)O3 Antiferroelectric Thin Films", Advanced Materials Research, Vols. 194-196, pp. 2467-2471, 2011

Online since:

February 2011




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