Influence of Film Thickness on Dielectric Properties of (Pb0.97La0.02)(Zr0.95Ti0.05)O3 Antiferroelectric Thin Films

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By the sol-gel process, Pb0.97La0.02(Zr0.95Ti0.05)O3 (PLZT) antiferroelectric (AFE) thin films with different thicknesses were successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates. The phase structure of the PLZT antiferroelectric thin films was studied by X-ray diffraction (XRD) analyses. The electric field-induced AFE-FE phase transformation behavior of the PLZT thin films,was examined by polarization versus field (P-E) and relative permittivity versus field (C-E) measurements, with priority focused on thickness-dependent phase switching field. The current by the polarization and depolarization of polar in the PLZT films was measured through current density-electric field (J-E) measurement. With the increase of film thickness, the maximum polarization less and less, the maximum current density is increasing.

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Periodical:

Advanced Materials Research (Volumes 194-196)

Edited by:

Jianmin Zeng, Taosen Li, Shaojian Ma, Zhengyi Jiang and Daoguo Yang

Pages:

2467-2471

DOI:

10.4028/www.scientific.net/AMR.194-196.2467

Citation:

J. Liu et al., "Influence of Film Thickness on Dielectric Properties of (Pb0.97La0.02)(Zr0.95Ti0.05)O3 Antiferroelectric Thin Films", Advanced Materials Research, Vols. 194-196, pp. 2467-2471, 2011

Online since:

February 2011

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$38.00

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