Evaluation of the Capacitances by Using High Frequency Roll-Off Fitting to the Second Order Approximation


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The characteristics and feasibility of the dielectric can be evaluated by the deposition of the dielectric in between two electrodes to form a capacitor. In metal-insulator-silicon (MIS) structure, 100 Å Ta2O5 films are deposited on 1000 Å doped poly silicon as a bottom electrode layer and 500 Å TiN metal on top of the dielectric film consecutively [1]. The measured capacitances of larger areas roll off at higher measuring frequency [2]. With the setting of an equivalent circuit, one successfully explains why the roll-off effect shows up. The deduced formulas give the common, reasonable, and convincing C1=1.1255×10-5 nF/mm2, which determines the equivalent dielectric (oxide) thickness 30.5Å.



Advanced Materials Research (Volumes 204-210)

Edited by:

Helen Zhang, Gang Shen and David Jin






H. C. Yang and M. C. Wang, "Evaluation of the Capacitances by Using High Frequency Roll-Off Fitting to the Second Order Approximation", Advanced Materials Research, Vols. 204-210, pp. 554-557, 2011

Online since:

February 2011




[1] Hsin-Chia Yang and Yi-Chang Cheng, Japanese Journal of Applied Physics, vol. 44, No. 4A. 2005. pp.1711-1716.

[2] Thomas Chang, SEMICON Taiwan, 1999, p.245–250.

[3] Steve Yang, (Hsin-Chia Yang) , SEMICON Taiwan, 1999, p.395–398.

[4] Hsin-Chia Yang, Determination of Capacitance of DRAM Capacitor as Encountering Roll-Off problems, IEEE, international conference, ICEMI 2009, 4-585.

DOI: 10.1109/icemi.2009.5274652

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