Stimulated Emission from Wide-Gap Semiconductors

Abstract:

Article Preview

Stimulated emission and optical gain problems are reviewed on the basis of analysis of highly photoexcited III-Nitride and ZnO wide-gap materials. Spontaneous and stimulated emission along with optical gain of these materials in UV region is analyzed. The possible mechanisms of inverted population in In-containing materials and ZnO semiconductors are discussed involving mechanisms of dense electron-hole plasma, carrier (exciton) localization, as well as various interaction processes in dense exciton gas.

Info:

Periodical:

Edited by:

Arturs Medvids

Pages:

110-113

DOI:

10.4028/www.scientific.net/AMR.222.110

Citation:

E. Kuokstis "Stimulated Emission from Wide-Gap Semiconductors", Advanced Materials Research, Vol. 222, pp. 110-113, 2011

Online since:

April 2011

Export:

Price:

$35.00

[1] C. F. Klingshirn, in: Semiconductor Optics (Springer, Berlin, 2007).

[2] S. Nakamura and G. Fasol, in: The Blue Laser Diode: GaN Based Light Emitters and Lasers (Springer-Verlag, Berlin, 1997).

[3] E. Kuokstis, C. Q. Chen, L. W. Yang, M. Shatalov, M. E. Gaevski, V. Adivarahan, and M. Asif Khan: Appl. Phys. Lett. Vol. 84 (2004), p.2998.

[4] E. Kuokštis, M. Karaliūnas, S. Juršėnas, S. Miasojedovas, T. Serevičius, S. -Y. Ting, J. -J. Huang, C. -C. Yang: Phys. Status Solidi C Vol. 6, (2009), p.2668.

[5] S. Nakamura: Science Vol. 281 (1998), p.956, and references therein.

[6] T. Moriya and T. Kushida: J. Phys. Soc. Japan Vol 40, (1976), p.1668, 1676.

In order to see related information, you need to Login.