Si-Based Single-Dopant Atom Devices

Abstract:

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We have recently proposed and demonstrated a new device concept, “Si-based single-dopant atom device”, consisting of only one or a few dopant atoms in the channel of Si field-effect transistors. The device characteristics are determined by a dopant, which is mediating electron or hole transport between source and drain electrodes. In this paper, our recent results on electronic and photonic applications are introduced. Furthermore, single-dopant images obtained by a scanning probe microscope are also presented.

Info:

Periodical:

Edited by:

Arturs Medvids

Pages:

205-208

DOI:

10.4028/www.scientific.net/AMR.222.205

Citation:

M. Tabe et al., "Si-Based Single-Dopant Atom Devices", Advanced Materials Research, Vol. 222, pp. 205-208, 2011

Online since:

April 2011

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$35.00

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