P-N Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells Applications

Abstract:

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The research report is devoted to the development of a new method of nanostructures formation in ITO/p-Si/Al structure with powerful laser radiation and study of its optical and electrical properties for solar cells applications. It was shown that after the structure irradiation by Nd:YAG laser second harmonic, dark current voltage characteristics become diode-like. Increase of ITO/p-Si/Al solar cell efficiency after irradiation by the laser, using photocurrent voltage characteristic method, was shown.

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Periodical:

Edited by:

Arturs Medvids

Pages:

225-228

DOI:

10.4028/www.scientific.net/AMR.222.225

Citation:

A. Medvid' et al., "P-N Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells Applications", Advanced Materials Research, Vol. 222, pp. 225-228, 2011

Online since:

April 2011

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Price:

$35.00

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