P-N Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells Applications
The research report is devoted to the development of a new method of nanostructures formation in ITO/p-Si/Al structure with powerful laser radiation and study of its optical and electrical properties for solar cells applications. It was shown that after the structure irradiation by Nd:YAG laser second harmonic, dark current voltage characteristics become diode-like. Increase of ITO/p-Si/Al solar cell efficiency after irradiation by the laser, using photocurrent voltage characteristic method, was shown.
A. Medvid' et al., "P-N Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells Applications", Advanced Materials Research, Vol. 222, pp. 225-228, 2011