Optical Characterization of MBE-Grown ZnO Epilayers

Abstract:

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Optical characterization of molecular-beam-epitaxy-grown ZnO and MgZnO epitaxial layers on sapphire (0001) substrates is presented. The parameters such as carrier recombination time and optical gain coefficient are analyzed. Radiative recombination mechanisms of ZnO in dense quasiparticle system are discussed. The ZnO epilayers even with lower structural quality are tolerable for applications in optoelectronics as light emitters.

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Periodical:

Edited by:

Arturs Medvids

Pages:

86-89

DOI:

10.4028/www.scientific.net/AMR.222.86

Citation:

M. Karaliunas et al., "Optical Characterization of MBE-Grown ZnO Epilayers", Advanced Materials Research, Vol. 222, pp. 86-89, 2011

Online since:

April 2011

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$35.00

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