Global Research and Education

Volume 222

doi: 10.4028/

Paper Title Page

Authors: Artur Medvid', Pavels Onufrijevs, Edvins Dauksta, Volodymyr Kyslyi

Abstract: The possibility to form “black silicon” on the surface of Si structure by Nd:YAG laser radiation has been shown. The shape and height of...

Authors: André Egbert, Oliver Brunke

Abstract: Nowadays, X-ray tube-based high-resolution CT systems are widely used in scientific research and industrial applications. But the potential,...

Authors: Masanori Eguchi, Toshitaka Yamakawa, Takeshi Yamakawa

Abstract: In travelling-wave electric fields, particles are propelled along electrode arrays by a propulsion force. The propulsion force depends on an...

Authors: K.Z. Liu, Masaru Shimomura, Y. Fukuda

Abstract: Surface electronic structures of n-GaP(001) and p-InP(001) with and without sulfur treatment have been studied by X-ray photoelectron...

Authors: Takeshi Hashimoto, Mitsuo Kaneko, András Rövid, Hiroaki Ohta, Akira Fukuda, Masamu Aniya, Nozomu Naito, Hiroyuki Enomoto, Pedro Skvarca

Abstract: To reveal the influence of global warming on glaciers, highly accurate observations of glacier movement must continue every year. It is...

Authors: Hiroya Ikeda, Faiz Salleh

Abstract: We propose a novel single-electron refrigerator (SER) which can be fabricated in silicon-on-insulator wafers. The SER has a structure of...

Authors: Tetsu Ito, Wataru Shichi, Masao Ichida, Hideki Gotoh, Hidehiko Kamada, Hiroaki Ando

Abstract: Electron spin-spin interaction in asymmetric coupled GaAs/AlGaAs quantum well (QW) is investigated through electron spin precession...

Authors: Ryszard Jabłoński, Roland Nowak

Abstract: The paper presents the method, configuration and calibration of special system for measuring the size of particles. It is designed for...

Authors: Kamen D. Kanev, Petro V. Gnatyuk, Volodymyr A. Gnatyuk

Abstract: In this work we consider some laser based methods and technologies for surface engraving and layered marking of opaque and transparent...

Authors: Aliaksandra Karabko, Anatoly Dostanko, Natalia Lapchuk, Pavels Onufrijevs

Abstract: Silicon p-type (100) wafers implanted with Ni, Co, Fe ions to a dose range of 3∙1013–3∙1016 cm-2 have been investigated by means of EPR. The...


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