Low Voltage supplied radio-frequency (RF) CMOS devices by TSMC 0.18 micron process are used for the RF circuit designs of low noise amplifiers. Three components, low noise amplifiers (LNA), Class-E power amplifiers (PA), and LC oscillator simultaneously working at 6.0 to 18.0 GHz, are explored. The scenario combining two matched amplifiers, LNA and PA, and then amplifying the coupled signals from the oscillators is proven to be working. LNA usually runs prior to PA to suppress the noises, and thus the whole set functions like an integrated LNA, whose forward gain may be promoted as high as at least over 40 dB just as expected. At 6.0, 12.0 and 18.0 GHz, magnitudes of both S11 and S22 in the Smith Chart are deliberately tuned to approach to zero as shown. And Noise Figure determined to be 1.175 gives promising integrated circuit.