Preparation of Stoichiometric TiNx Films by Laser CVD with Metalorganic Precursor

Abstract:

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Nearly stoichiometric TiNx films were deposited on Al2O3 substrates by laser enhanced chemical vapor deposition (CVD) with tetrakis (diethylamido) titanium (TDEAT) and ammonia as the source materials. Emphases were given on the effects of laser power (PL) and pre-heating temperature (Tpre) on the composition and deposition rate of TiNx films. Single phase of TiNx films with columnar cross section were obtained. The ratio of N to Ti in TiNx films increased with increasing PL and was close to stoichiometric at PL > 150 W. The deposition rate of TiNx films with a depositing area of 300 mm2 was about 18-90 µm/h, which decreased with increasing PL and Tpre.

Info:

Periodical:

Advanced Materials Research (Volumes 239-242)

Edited by:

Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He

Pages:

318-321

DOI:

10.4028/www.scientific.net/AMR.239-242.318

Citation:

Y. S. Gong et al., "Preparation of Stoichiometric TiNx Films by Laser CVD with Metalorganic Precursor", Advanced Materials Research, Vols. 239-242, pp. 318-321, 2011

Online since:

May 2011

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Price:

$35.00

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