Experimental Study on Cryogenic Polishing Single Silicon Wafer with Nano-Sized Cerium Dioxide Powders

Abstract:

Article Preview

Cryogenic polishing single silicon wafer with nano-sized CeO2 abrasives can be known as cryogenic fixed abrasives CMP (CFA-CMP). The abrasive slurry was made of nano-sized CeO2 particles dispersed in de-ionized water with a surfactant and the polishing slurry froze to form cryogenic polishing pad. Then the polishing tests of the blanket silicon wafers in the presence of the cryogenic polishing pad containing the nano-particulates were carried out. The morphologies and surfaces roughness of the polished silicon wafers were observed and examined on an atomic force microscope (AFM). The results show that a super smooth surface with roughness of 0. 293 nm is obtained within 5000 nm× 5000 nm and the removal of material is dominated by plastic flowage.

Info:

Periodical:

Advanced Materials Research (Volumes 24-25)

Edited by:

Hang Gao, Zhuji Jin and Yannian Rui

Pages:

177-182

Citation:

Y. L. Sun et al., "Experimental Study on Cryogenic Polishing Single Silicon Wafer with Nano-Sized Cerium Dioxide Powders", Advanced Materials Research, Vols. 24-25, pp. 177-182, 2007

Online since:

September 2007

Export:

Price:

$38.00

[1] P.V. Zant : Microchip Fabrication: a practical guide to Semiconductor processing. (McGraw-Hill, NY 2000). Fig. 7 Model of material removal of CFA-CMP a a0 a1 Object carrier Soft corrosion layer Naon-sized CeO2 abrasive Liquid film Bulk material Cryogenic fixed abrasives polishing pad.

[2] H. Lei, J. B. Luo and J. J. Ma: Lubrication Engineering Vol. 4 (2002), p.74.

[3] Y. W. Zhao, L. Chang and S.H. Kim: Wear Vol. 254(2003), p.332.

[4] H. Lei, J. B. Luo: Wear, Vol. 257 (2004), p.461.

[5] L.M. Cook: J. Non-cryst. Solids Vol. 120 (1990), p.152.

[6] H. Nojo, M. Kodera and R. Nakata: IEEE Vol. 96 (1996), p.349.

[7] K. Susa, in: A Workshop on CMP (Lake Placid, NY 1997).

[8] L. M. Cook: J. Non-cryst. Solids, Vol. 120 (1990), p.152.

[9] J. Warnock: The Electrochemical Society, Vol. 138 (1991), p.2398.

[10] Y.L. Sun, D.W. Zuo and Y.W. Zhu, et al: Key Engineering Material, in press.

[11] R.J. Han, H.D. Sun and D.Q. Xu, et al: Optics and Precision Engineering, Vol. 6 (1998) p.104.

[12] S.H. Li, C. H Zhou and R.J. Zhang, et al: Tribology, Vol. 22 (2002), p.74.

[13] H. Fusstter: Mat. Res. Soc. Symp. Proc, Vol. 386 (1995) p.97.

[14] S. Kamiya, H. Iwase and T. Nagaike, et al: Key Engineering Material, Vol. 329 (2007) p.367.

[15] T.G. Bifnao, T.A. Bow, R.O. Scattergood: J. Eng. Industry, Vol. 113 (1991) p.184.