Evaluation of Piezoelectric Properties of AlN Using MEMS Resonators

Abstract:

Article Preview

This paper presents an effective evaluation of piezoelectric coefficients (d31 and d33) and other mechanical properties of AlN thin films using resonator structures fabricated on a single wafer. The extracted value for d31 is 1.60pm/V and the d33 value is 3.15pm/V, which are comparable to the coefficient values published in literature. Fabrication of these resonator structures is straightforward and can be incorporated with other more complex steps. Hence, these resonators can serve as an excellent test structures to evaluate and predict the quality of AlN growth and piezoelectric properties of thin AlN films.

Info:

Periodical:

Edited by:

Lynn Khine and Julius M. Tsai

Pages:

74-77

DOI:

10.4028/www.scientific.net/AMR.254.74

Citation:

L. Khine et al., "Evaluation of Piezoelectric Properties of AlN Using MEMS Resonators", Advanced Materials Research, Vol. 254, pp. 74-77, 2011

Online since:

May 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.