New Compositionally-Ordered GeSi Nano Dots Fabricated with 1250 keV Electrons


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Transformation of uniformly strained GexSi1-x layers into GeSi dots of 3 ~ 7 nm which are compositionally ordered by one or concurrently two sets of {111} planes was carried out for the first time under non-equilibrium conditions induced by 1.25 MeV electron irradiation at Tc ≥ 200 oC in the high voltage electron microscope (JEM-ARM1300S). This microscope installed in the KBSI is characterized by an excellent point-to-point resolution of 0.12 nm allowing obtaining detailed information on chemical ordering at specific parameters of defocus (-800 Å) and crystal thickness (200~250 Å) determined by extensive HRTEM image simulation for the ordered dots.



Advanced Materials Research (Volumes 26-28)

Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee




S. A. Song et al., "New Compositionally-Ordered GeSi Nano Dots Fabricated with 1250 keV Electrons", Advanced Materials Research, Vols. 26-28, pp. 1195-1198, 2007

Online since:

October 2007




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