Femtosecond Laser Synthesis of High-Pressure Phases of Si

Abstract:

Article Preview

The high pressure simple hexagonal structure of silicon, which has not been synthesized, is quenched using femtosecond laser-driven shock wave. Any high-pressure phases of silicon do not remain after the pressure release in the case of the hydrostatic and conventional shock compression methods. We found the existence of the simple hexagonal structure after the intense femtosecond laser irradiation to silicon by analyzing the crystalline structures using a synchrotron grazing-incidence XRD method. Femtosecond laser-driven shock wave is a useful tool for the synthesis of non-equilibrium high-pressure phases.

Info:

Periodical:

Advanced Materials Research (Volumes 26-28)

Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee

Pages:

1291-1294

DOI:

10.4028/www.scientific.net/AMR.26-28.1291

Citation:

M. Tsujino et al., "Femtosecond Laser Synthesis of High-Pressure Phases of Si", Advanced Materials Research, Vols. 26-28, pp. 1291-1294, 2007

Online since:

October 2007

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.