Low-Temperature Deposition of Amorphous Carbon Films for Surface Passivation of Carbon-Doped Silicon Oxide


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Low-temperature plasma-enhanced chemical vapor deposition of amorphous carbon (a-C:H) films was investigated for surface passivation of carbon-doped silicon oxide (SiOCH) films. The a-C:H films were deposited using CH4 and Ar gases at 40–65°C. FT-IR results showed that the deposited films are a-C:H which incorporates hydrocarbon groups. In current−voltage measurements, the a-C:H showed a low leakage current of ~10–10 A/cm2 in air, indicating that the a-C:H films have a potential as a surface passivation layer to prevent moisture absorption in air. The insulating properties of room-temperature deposited SiOCH covered by the a-C:H strongly depended on radio frequency (RF) power in the SiOCH deposition. In the SiOCH film deposited at high RF power of 200 W, the resistivity in air was improved by the a-C:H passivation.



Advanced Materials Research (Volumes 26-28)

Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee




K. Yamaoka et al., "Low-Temperature Deposition of Amorphous Carbon Films for Surface Passivation of Carbon-Doped Silicon Oxide", Advanced Materials Research, Vols. 26-28, pp. 645-648, 2007

Online since:

October 2007




[1] Y. Wu, P. Liu and B. S. Ong: Appl. Phys. Lett. Vol. 89 (2006), p.013505.

[2] Y. Kato, S. Iba, R. Teramoto, T. Sekitani, T. Someya, H. Kawaguchi and T. Sakurai: Appl. Phys. Lett. Vol. 84 (2004), p.3789.

[3] Y. Noguchi, T. Sekitani and T. Someya: Appl. Phys. Lett. Vol. 89 (2006), p.253507.

[4] D. Stryahilev, A. Sazonov and A. Nathan: J. Vac. Sci. Technol. A Vol. 20 (2002), p.1087.

[5] D. J. Gundlach, J. A. Nichols, L. Zhou and T. N. Jackson: Appl. Phys. Lett. Vol. 80 (2002), p.2925.

[6] T. Satoh, H. Fujikawa and Y. Taga: Appl. Phys. Lett. Vol. 87 (2005), p.143503.

[7] K. Yamaoka, Y. Yoshizako, H. Kato, D. Tsukiyama, Y. Terai and Y. Fujiwara: Physica B Vol. 376-377 (2006), p.399.

[8] K. Yamaoka, N. Okada, Y. Yoshizako, Y. Terai and Y. Fujiwara: Jpn. J. Appl. Phys. Vol. 46 (2007), p. (1997).

[9] J. Robertson: Mater. Sci. Eng. R Vol. 37 (2002), p.129.

[10] A. Hartstein and D. R. Young: Appl. Phys. Lett. Vol. 38 (1981), p.631.