Effect of Residual Stress on P Doped Nano-Crystalline Silicon Deposited by HWCVD Films


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p doped nano-crystal l ine si l icon (nc-Si) were deposi ted by hot wire chemical vapour deposi t ion (HWCVD) using SiH4 , H2 and B2H6 precursors. nc-Si was characterized by XRD, Raman and residual st ress. Residual stress of nc-Si were measure by Sin2ψ vs d method. As deposi ted fi lms show tensi le st ress and decreases from 2500 MPa to 250 MPa wi th increase of B2H6 f low rate f rom 0.01 to 5 %. Crystal l ine f ract ion of p doped nc-Si decreases f rom 35 to 57% as wi th increase of B2H6 concent rat ion



Advanced Materials Research (Volumes 26-28)

Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee




B. P. Swain, "Effect of Residual Stress on P Doped Nano-Crystalline Silicon Deposited by HWCVD Films", Advanced Materials Research, Vols. 26-28, pp. 653-656, 2007

Online since:

October 2007






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