Electronic Transport Properties of Tin-Filled Cobalt Antimonides


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The encapsulated induction melting was attempted to prepare the Sn-filled CoSb3 skutterudites and their electronic transport properties were investigated. Single phase δ-CoSb3 was successfully obtained by the subsequent isothermal heat treatment at 823K for 6 days in vacuum. The Sn-filled CoSb3 showed p-type conductivity at 300K to 700K at it is a highly degenerate semiconductor. Lattice contribution was dominant to thermal conductivity and it was considerably reduced by Sn filling in the CoSb3 skutterudite.



Advanced Materials Research (Volumes 26-28)

Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee




J. Y. Jung et al., "Electronic Transport Properties of Tin-Filled Cobalt Antimonides", Advanced Materials Research, Vols. 26-28, pp. 891-894, 2007

Online since:

October 2007




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