Electronic Transport Properties of Tin-Filled Cobalt Antimonides
The encapsulated induction melting was attempted to prepare the Sn-filled CoSb3 skutterudites and their electronic transport properties were investigated. Single phase δ-CoSb3 was successfully obtained by the subsequent isothermal heat treatment at 823K for 6 days in vacuum. The Sn-filled CoSb3 showed p-type conductivity at 300K to 700K at it is a highly degenerate semiconductor. Lattice contribution was dominant to thermal conductivity and it was considerably reduced by Sn filling in the CoSb3 skutterudite.
Young Won Chang, Nack J. Kim and Chong Soo Lee
J. Y. Jung et al., "Electronic Transport Properties of Tin-Filled Cobalt Antimonides", Advanced Materials Research, Vols. 26-28, pp. 891-894, 2007