Chemical Composition and Structure of the Boride Inclusions in Synthetic Diamonds Grown under HPHT


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Boride inclusions in the synthetic diamond single crystals grown from Fe-Ni-C-B system under high temperature and high pressure were studied in the present paper. Both chemical composition and structure of the inclusions incorporated into the diamond during the process of diamond growth were successfully determined by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). It was found that the inclusions related to boron trapped in the diamond consisted of f.c.c. (FeNi)23(CB)6, (FeNi)3(CB), Fe2B, FeB, hexagonal Ni3B, and B4C.



Edited by:

Fei Hu and Beibei Wang




J. H. Gong et al., "Chemical Composition and Structure of the Boride Inclusions in Synthetic Diamonds Grown under HPHT", Advanced Materials Research, Vol. 279, pp. 101-105, 2011

Online since:

July 2011




[1] Wang M, Li H S, Li M S, et al.: Effect of boron contained in the catalyst on thermal stability of boron-doped diamond single crystals. Chinese Journal of High Pressure Physics, 22, 2(2008), pp.215-219.

[2] Barjon J, Habka N, Mer C, et al.: Resistivity of boron doped diamond. Physica status Solidi-rapid Research Letters, 3, 6(2009), pp.202-204.


[3] Soltani A, Talbi A, Mortet V, et al.: Diamond and Cubic Boron Nitride: Properties, Growth and Applications. 2010 Wide Bandgap Cubic Semiconductors: From Growth to Devices, Vol. 1292 (2010), pp.191-196.


[4] Luong JHT, Male KB, Glennon JD: Boron-doped diamond electrode: synthesis, characterization, functionalization and analytical applications. Analyst, Vol 134 (2009), p.1965-(1979).


[5] Achard, J; Silva, F; Issaoui, R, et al.: Thick boron doped diamond single crystals for high power electronics. 4th International Conference on New Diamond and Nano Carbons, 2010 Suzhou, China.

[6] Li HD, Zhang T, Li LA, et al.: Investigation on crystalline structure, boron distribution, and residual stresses in freestanding boron-doped CVD diamond films. Journal of crystal growth, Vol 12 (2010), p.1986-(1991).


[7] Show, Yoshiyuki; Matsukawa, Toshikazu; Ito, Hirokazu: Structural changes in CVD diamond film by boron and nitrogen doping. Diamond and Related Materials, 9, 3(2000), pp.337-340.


[8] Muramatsu Y, Iihara J, Takebe T, et al.: Chemical analysis of impurity boron atoms in diamond using soft X-ray emission spectroscopy. Analytical Sciences, Vol 24 (2008), pp.831-834.


[9] Yin, Long-Wei, Zou, Zeng-Da, Li, Mu-Sen: Some inclusions and defects in a synthetic diamond single crystal. Journal of Crystal Growth, 218, 2(2000), pp.455-458.


[10] Y.A. Kocherzhinskii, O.G. Kulik, V.Z. Turkevich: Phase equilibria in the Fe-Ni-C and Fe-Co-C systems under high temperatures and high pressures. High Temp. -High Press. 25 (1993), p.113.

[11] Pavel, E. Baluta, Gh. Barb, D: Nature of the metrallic inclusions in syntetic diamond crystals synthesized at approximately 5. 5 Gpa in Fe-C system. Solid State Communications, 76, 4(1990), pp.531-533.


[12] Pavel, E.; Baluta, Gh.; Barb, D.: (Fe1-XMex)3C carbide identification in synthetic diamond crystals produced at high pressure and high temperature in Fe-Me-C systems, where Me=Ni, Co. Materials Letters, 10, 1-2(1990), pp.62-65.


[13] Pavel, E.; Baluta, Gh.; Barb, D.: Complex carbides in synthetic diamond crystals produced at approx 5. 5 Gpa. Journal of Materials Science, 28, 6(1993), pp.1645-1647.


[14] Pavel, E.; Baluta, Gh.; Giurqiu, C.: Invar property of the metallic inclusions in synthetic diamond crystals grown in the Fe-Ni-C system. Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing, A150, 1(1992).


[15] Sung, T.; Popovici, G.; Prelas, M.A.: Boron diffusion coefficient in diamond, Diamonds for Electronic Applications. Nov 27-Dec 1 (1995).

[16] Turov, Yu.V.; Khusid, B.M.; Voroshnin, L.G.: Structure formation under sintering of powder iron-boron carbide composite. Poroshkovaya Metallurgiya, n6(1991), pp.25-31.