Three-Dimensional Optical Bit Memory in Sm(DBM)3Phen-Doped and Un-Doped Poly(methyl methacrylate)

Abstract:

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The feasibility of three-dimensional optical bit memory is demonstrated by using the change of fluorescence and refractive index in Sm(DBM)3Phen-doped and un-doped Poly(methyl methacrylate). After a femtosecond pulsed laser irradiation, a refractive-index bit and a fluorescent bit can be formed at the same position inside the bulk sample. Multilayer patterns recorded by tightly focusing the pulsed laser beam were read out by a reflection-type fluorescent confocal microscope, which can detect the reflection signal and also the fluorescent signal of the stored bits. The signal-to-noise ratio via the two retrieval modes was compared as a function of recording depth. The stored bits were retrieved with a high signal-to-noise ratio in the absence of any crosstalk and the detection of the fluorescent signal enables retrieval of the stored bits with a higher S/N ratio.

Info:

Periodical:

Advanced Materials Research (Volumes 284-286)

Main Theme:

Edited by:

Xiaoming Sang, Pengcheng Wang, Liqun Ai, Yungang Li and Jinglong Bu

Pages:

2251-2254

DOI:

10.4028/www.scientific.net/AMR.284-286.2251

Citation:

Z. G. Nie et al., "Three-Dimensional Optical Bit Memory in Sm(DBM)3Phen-Doped and Un-Doped Poly(methyl methacrylate)", Advanced Materials Research, Vols. 284-286, pp. 2251-2254, 2011

Online since:

July 2011

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$35.00

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