Spin Precession from Hyperfine Interaction on Magnetoresistance in Nonmagnetic Organic Semiconductors

Abstract:

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We investigate the effect of hyperfine interaction on magnetoresistance in nonmagenetic organic semiconductors. A Lorentz-type magnetoresistance is obtained from hyperfine interaction-dependent spin precession picture. The magnetoresistance depends on initial spin orientation of electron to hole in electron-hole pairs. Increasing hyperfine interaction slows down change of the magnetoresistance with magnetic field. The field dependence, the sign and saturation value of the magnetoresistances are composite effects of recombination and dissociation rate constants of singlet and triplet electron-hole pairs.

Info:

Periodical:

Advanced Materials Research (Volumes 287-290)

Edited by:

Jinglong Bu, Pengcheng Wang, Liqun Ai, Xiaoming Sang, Yungang Li

Pages:

1443-1447

DOI:

10.4028/www.scientific.net/AMR.287-290.1443

Citation:

J. Q. Zhao et al., "Spin Precession from Hyperfine Interaction on Magnetoresistance in Nonmagnetic Organic Semiconductors", Advanced Materials Research, Vols. 287-290, pp. 1443-1447, 2011

Online since:

July 2011

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$35.00

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