Comparative Study of Copper Diffusion in Plasma Treated Low-k Dielectric Thin Film Using XPS and SIMS

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Low-k dielectric improves the switching speed by reducing the parasitic capacitance in integrated circuits. However it suffers the problem of copper diffusion. Forming gas (H2 + N2) plasma treatment on the surface of HSG-7000 low-k dielectric thin film has demonstrated to improve copper diffusion resistance. Two techniques using X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectroscopy (SIMS) have been used to examine the copper diffusion on this thin film. A thin layer of 10 nm with C-N bonds near the HSG-7000 surface were believed to be created by the plasma treatment and confirmed with XPS and SIMS and acts as barrier.

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Periodical:

Advanced Materials Research (Volumes 29-30)

Edited by:

Deliang Zhang, Kim Pickering, Brian Gabbitas, Peng Cao, Alan Langdon, Rob Torrens and Johan Verbeek

Pages:

347-350

Citation:

K.C. Aw et al., "Comparative Study of Copper Diffusion in Plasma Treated Low-k Dielectric Thin Film Using XPS and SIMS", Advanced Materials Research, Vols. 29-30, pp. 347-350, 2007

Online since:

November 2007

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$38.00

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