Comparative Study of Copper Diffusion in Plasma Treated Low-k Dielectric Thin Film Using XPS and SIMS
Low-k dielectric improves the switching speed by reducing the parasitic capacitance in integrated circuits. However it suffers the problem of copper diffusion. Forming gas (H2 + N2) plasma treatment on the surface of HSG-7000 low-k dielectric thin film has demonstrated to improve copper diffusion resistance. Two techniques using X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectroscopy (SIMS) have been used to examine the copper diffusion on this thin film. A thin layer of 10 nm with C-N bonds near the HSG-7000 surface were believed to be created by the plasma treatment and confirmed with XPS and SIMS and acts as barrier.
Deliang Zhang, Kim Pickering, Brian Gabbitas, Peng Cao, Alan Langdon, Rob Torrens and Johan Verbeek
K.C. Aw et al., "Comparative Study of Copper Diffusion in Plasma Treated Low-k Dielectric Thin Film Using XPS and SIMS", Advanced Materials Research, Vols. 29-30, pp. 347-350, 2007