Graphene, comprising of monolayer of carbon atoms packed into a two-dimensional honeycomb lattice, has a series of peculiar properties such as the anomalously quantized Hall effects, the large charge carrier mobility and so on. Both micromechanical cleavage method and hydrazine reduction process are used to produce graphene sheet. Two kinds of graphene pattern have been placed between the source and the drain electrodes of a new type of combined three dimensional back-gated FET as the channel by location transplantation method. Micromechanical cleavage method can produce graphene which has uniform crystal lattice structure and the same chirality, while chemical reductions produce graphene with different chirality. The IDS-VDS curves of FET properties show that micromechanical cleavage graphene sheet channels have obvious response to the gate voltage.