Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy

Abstract:

Article Preview

In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown on p-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1 at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1 level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.

Info:

Periodical:

Advanced Materials Research (Volumes 295-297)

Edited by:

Pengcheng Wang, Liqun Ai, Yungang Li, Xiaoming Sang and Jinglong Bu

Pages:

777-780

DOI:

10.4028/www.scientific.net/AMR.295-297.777

Citation:

M. Ajaz Un Nabi et al., "Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy", Advanced Materials Research, Vols. 295-297, pp. 777-780, 2011

Online since:

July 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.