Enhanced Infrared Normal Spectral Emissivity of Microstructured Silicon at 100 to 200°C


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The infrared normal spectral emissivity of microstructured silicon prepared by femtosecond laser was measured for the middle infrared waveband at temperature range 100 to 200°C. Compared to that of flat silicon, emissivity was enhanced over the entire wavelength range. For a sample with different spike height, the minimum emissivity at a temperature of 100°C is more than 0.6. Although the average emissivity is less than Nextel- Velvet-811-21 Coating , it can be used stably at more wide temperature ranges. These results show the potential for microstructured silicon to be used as a flat blackbody source or silicon-based devices.



Advanced Materials Research (Volumes 295-297)

Edited by:

Pengcheng Wang, Liqun Ai, Yungang Li, Xiaoming Sang and Jinglong Bu






G. J. Feng et al., "Enhanced Infrared Normal Spectral Emissivity of Microstructured Silicon at 100 to 200°C", Advanced Materials Research, Vols. 295-297, pp. 886-889, 2011

Online since:

July 2011




[1] Her T-H, Finlay RJ, Wu C, Deliwala SandMazur E. Microstructuring of silicon with femtosecond laser pulses: Applied Physics Letters. Vol. 73 (1998): pp.1673-1675.

DOI: 10.1063/1.122241

[2] Zhu J, Zhao L, Li W, Wang Y, Feng GandWang Z. Great enhancement of infrared light absorption of silicon surface-structured by femtosecond laser pulses in N2 ambient: Materials Letters. Vol. 60 (2006): pp.2187-2189.

DOI: 10.1016/j.matlet.2005.12.095

[3] Liu Y, Liu S, Wang Y, Feng G, Zhu JandZhao L. Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon: Laser Physics. Vol. 18 (2008): pp.1148-1152.

DOI: 10.1134/s1054660x08100071

[4] Maloney PG, Smith P, King VandBillman C. Emissivity of microstructured silicon: Applied Optics. Vol. 49 (2010): pp.1065-1068.

[5] Feng G, Wang Y, Li Y, Zhu JandZhao L. Greatly enhanced infrared normal spectral emissivity of microstructured silicon using a femtosecond laser: Materials Letters. Vol. 65 (2011): p.1238–1240.

DOI: 10.1016/j.matlet.2011.01.067

[6] Wang Y, Liu S, Wang Y, Feng G, Zhu JandZhao L. Infrared light absorption of silver film coated on the surface of femtosecond laser microstructured silicon in SF6: Materials Letters. Vol. 63 (2009): pp.2718-2720.

DOI: 10.1016/j.matlet.2009.09.052

[7] Paderin LY, Baskin IMandFilin YV. EMISSIVITY MEASUREMENT FOR THERMAL INSULATING MATERIALS AT LOW TEMPERATURES: Measurement Techniques. Vol. 27 (1984): pp.431-433.

DOI: 10.1007/bf00838687

[8] Tank V. Infrared temperature measurement with automatic correction of the influence of emissivity: Infrared Physics. Vol. 29 (1989): pp.211-212.

DOI: 10.1016/0020-0891(89)90051-1

[9] Moghaddam S, Lawler J, Currano JandKim J. Novel method for measurement of total hemispherical emissivity: Journal of Thermophysics and Heat Transfer. Vol. 21 (2007): pp.128-133.

DOI: 10.2514/1.26181

[10] Hameury J, Hay BandFiltz JR. Measurement of infrared spectral directional hemispherical reflectance and emissivity at BNM-LNE: International Journal of Thermophysics. Vol. 26 (2005): p.1973-(1983).

DOI: 10.1007/s10765-005-8609-0

[11] Kwor ETandMattei S. Emissivity measurements for Nextel Velvet Coating 811-21 between -36 ℃ and 82 ℃: High Temperatures-High Pressures. Vol. 33 (2001): pp.551-556.

DOI: 10.1068/htwu385

[12] Timans PJ. Emissivity of silicon at elevated temperatures: Journal of Applied Physics. Vol. 74 (1993): pp.6353-6364.

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