Enhanced Infrared Normal Spectral Emissivity of Microstructured Silicon at 100 to 200°C

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The infrared normal spectral emissivity of microstructured silicon prepared by femtosecond laser was measured for the middle infrared waveband at temperature range 100 to 200°C. Compared to that of flat silicon, emissivity was enhanced over the entire wavelength range. For a sample with different spike height, the minimum emissivity at a temperature of 100°C is more than 0.6. Although the average emissivity is less than Nextel- Velvet-811-21 Coating , it can be used stably at more wide temperature ranges. These results show the potential for microstructured silicon to be used as a flat blackbody source or silicon-based devices.

Info:

Periodical:

Advanced Materials Research (Volumes 295-297)

Edited by:

Pengcheng Wang, Liqun Ai, Yungang Li, Xiaoming Sang and Jinglong Bu

Pages:

886-889

DOI:

10.4028/www.scientific.net/AMR.295-297.886

Citation:

G. J. Feng et al., "Enhanced Infrared Normal Spectral Emissivity of Microstructured Silicon at 100 to 200°C", Advanced Materials Research, Vols. 295-297, pp. 886-889, 2011

Online since:

July 2011

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Price:

$38.00

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