The Range Distribution of Nd Ions Implanted in Silicon-on-Insulator
In view of the influence of the projected range, the range straggling, and the lateral deviation of ions in materials on the property of photoelectric integration devices fabricated by ion implantation, the mean projected ranges and range straggling for energetic 200 – 500 keV neodymium (Nd) ions implanted in silicon-on-insulator (SOI) at room temperature were measured by means of Rutherford backscattering followed by spectrum analysis. The measured results are compared with Monte Carlo code (SRIM2006) predictions. Our results show that the measured values of the mean projected range Rp are good agreement with the SRIM calculated values; for the range straggling ΔRp, the difference between the experiment data and the calculated results is much higher than that of Rp.
Shiquan Liu and Min Zuo
Y. Liang et al., "The Range Distribution of Nd Ions Implanted in Silicon-on-Insulator", Advanced Materials Research, Vols. 306-307, pp. 315-318, 2011