Properties of Al Doped ZnO Thin films by DC Reaction Magnetron Sputtering

Abstract:

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The high quality ZAO thin films were successfully produced by DC reaction magnetron sputtering technology. The XRD,electrical and optical properties of films are particular investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure,and Al2O3 crystal phase are not found. At the same time,the high quality ZAO films with the minimum resistivity of 4.5x10-4Ω•㎝, the transmittance in visible region above 80% and the reflectivity in IR region above 70% are gained.

Info:

Periodical:

Advanced Materials Research (Volumes 306-307)

Edited by:

Shiquan Liu and Min Zuo

Pages:

362-367

DOI:

10.4028/www.scientific.net/AMR.306-307.362

Citation:

F. Lu et al., "Properties of Al Doped ZnO Thin films by DC Reaction Magnetron Sputtering", Advanced Materials Research, Vols. 306-307, pp. 362-367, 2011

Online since:

August 2011

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Price:

$35.00

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