Novel Design of MOCVD Reactor with Three Radial Inward Flows for Epitaxial Growth of GaN Thin Films


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In this paper, a novel super large metal organic chemical vapor deposition (MOCVD) reactor with three inlets located on the periphery of reactor was proposed and numerical evaluation of growth conditions for GaN thin film was characterized. In this design, the converging effects of gas flow in the radial direction could counterbalance the dissipation of metal organics source. CFD was used for the mathematical solution of the fluid flow, temperature and concentration fields. A 2-D model utilizing axisymmetric mode to simulate the gas flow in a MOCVD has been developed. The growth of GaN films using TMGa as a precursor, hydrogen as carrier gas was investigated. The effects of flow rates, mass fraction of various species, operating pressure, and gravity were analyzed and discussed, respectively. The numerical simulation results show all the fields distributions were in an acceptable range.



Advanced Materials Research (Volumes 308-310)

Edited by:

Jian Gao




L. Q. Yang et al., "Novel Design of MOCVD Reactor with Three Radial Inward Flows for Epitaxial Growth of GaN Thin Films", Advanced Materials Research, Vols. 308-310, pp. 1037-1040, 2011

Online since:

August 2011




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