Structural Investigation of Cubic-Phase InN on GaAs (001) Grown by MBE under In- and N-Rich Growth Conditions

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We have investigated effect of the In- and N-rich growth conditions on the structural modification of cubic-phase InN (c-InN) films grown on GaAs (001) substrates by rf-plasmaassisted molecular beam epitaxy (RF-MBE). High resolution x-ray diffraction (HRXRD) and Raman scattering measurements were performed to examine the hexagonal phase generation in the c-InN grown films. It is evident that higher crystal quality c-InN films with higher cubic phase purity (~82%) were achieved under the In-rich growth condition. On the other hand, for the N-rich growth condition, the c-InN films exhibited higher incorporation of hexagonal phase, which is generated in the cubic phase through the incidental stacking faults on the c-InN (111) planes. Our results demonstrate that the In-rich growth condition plays a critical role in the growth of high quality c-InN films with higher cubic phase purity.

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Periodical:

Edited by:

S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG

Pages:

215-217

Citation:

S. Kuntharin et al., "Structural Investigation of Cubic-Phase InN on GaAs (001) Grown by MBE under In- and N-Rich Growth Conditions", Advanced Materials Research, Vol. 31, pp. 215-217, 2008

Online since:

November 2007

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