Structural Investigation of Cubic-Phase InN on GaAs (001) Grown by MBE under In- and N-Rich Growth Conditions
We have investigated effect of the In- and N-rich growth conditions on the structural modification of cubic-phase InN (c-InN) films grown on GaAs (001) substrates by rf-plasmaassisted molecular beam epitaxy (RF-MBE). High resolution x-ray diffraction (HRXRD) and Raman scattering measurements were performed to examine the hexagonal phase generation in the c-InN grown films. It is evident that higher crystal quality c-InN films with higher cubic phase purity (~82%) were achieved under the In-rich growth condition. On the other hand, for the N-rich growth condition, the c-InN films exhibited higher incorporation of hexagonal phase, which is generated in the cubic phase through the incidental stacking faults on the c-InN (111) planes. Our results demonstrate that the In-rich growth condition plays a critical role in the growth of high quality c-InN films with higher cubic phase purity.
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
S. Kuntharin et al., "Structural Investigation of Cubic-Phase InN on GaAs (001) Grown by MBE under In- and N-Rich Growth Conditions", Advanced Materials Research, Vol. 31, pp. 215-217, 2008