Characteristics of Ge Nanocrystals Grown by RF Magnetron Sputtering
We report the self-assembled growth of Ge islands of different shapes and sizes on p-Si (001) by r.f. magnetron sputtering by varying the r.f. power, growth temperature and postdeposition annealing condition. The well known Stranski-Krastanov growth mechanism due to lattice mismatch between Si & Ge leads to the formation of Ge islands, similar to a more sophisticated MBE growth, albeit at a much higher pressure in our study. Ge nanocrystals embedded in SiO2 matrix have also been grown. Optical properties of nanocrystals exhibiting visible luminescence at room temperature are presented.
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
R.K. Singha et al., "Characteristics of Ge Nanocrystals Grown by RF Magnetron Sputtering", Advanced Materials Research, Vol. 31, pp. 89-91, 2008