Characteristics of Ge Nanocrystals Grown by RF Magnetron Sputtering

Abstract:

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We report the self-assembled growth of Ge islands of different shapes and sizes on p-Si (001) by r.f. magnetron sputtering by varying the r.f. power, growth temperature and postdeposition annealing condition. The well known Stranski-Krastanov growth mechanism due to lattice mismatch between Si & Ge leads to the formation of Ge islands, similar to a more sophisticated MBE growth, albeit at a much higher pressure in our study. Ge nanocrystals embedded in SiO2 matrix have also been grown. Optical properties of nanocrystals exhibiting visible luminescence at room temperature are presented.

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Periodical:

Edited by:

S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG

Pages:

89-91

DOI:

10.4028/www.scientific.net/AMR.31.89

Citation:

R.K. Singha et al., "Characteristics of Ge Nanocrystals Grown by RF Magnetron Sputtering", Advanced Materials Research, Vol. 31, pp. 89-91, 2008

Online since:

November 2007

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$35.00

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