Semiconductor Photonics: Nano-Structured Materials and Devices

Volume 31

doi: 10.4028/

Paper Title Page

Authors: Ee Leong Lim, Jing Hua Teng, Soo Jin Chua, J.R. Dong, Norman Soo Seng Ang, Lip Fah Chong

Abstract: One challenge for the realization of electrically drive nano-photonic devices is the formation of metal contacts and passivation. In this...

Authors: V. Hongpinyo, Y.H. Ding, J. Anderson, Hery S. Djie, Boon S. Ooi, R.R. Du, A. Ganjoo, H. Jain

Abstract: We investigate the influence of sputtered silica as annealing cap on the enhancement of intermixing rate of semiconductor quantum...

Authors: Lip Fah Chong, Jing Hua Teng, Ee Leong Lim, Norman Soo Seng Ang, J.R. Dong, Soo Jin Chua

Abstract: In this paper, we present the theoretical investigation of index-coupled distributed feedback (DFB) laser with tilted single mode ridge...

Authors: Lee Siang Chuah, Hassan Zainuriah, Abu Hassan Haslan

Abstract: This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as grown GaN. The samples were...

Authors: V. Suresh Kumar, J. Kumar

Abstract: We report on the growth mechanism, structural and optical characterstics of Gallium nitride nanowires prepared on sapphire substrates...

Authors: C.M.J. Wijers, O. Voskoboynikov

Abstract: In a hybrid discrete-continuum description the optical response of a capped monolayer of nano-objects has been determined. The monolayer...

Authors: S.K. Mohanta, R.K. Soni, S. Tripathy, Soo Jin Chua

Abstract: The InP nanostructures have been fabricated by low-energy Ar+-ion of dose 1 × 1018 cm-2 and energy 50 keV, at normal incidence. The InP...

Authors: Subindu Kumar, Dipankar Biswas, Tapas Das

Abstract: In recent years there have been extensive studies on III-V semiconductor quantum dots (QDs). In this paper we have formulated the...

Authors: Dipankar Biswas, Tapas Das, Sanjib Kabi, Subindu Kumar

Abstract: For successive annealing stages the photoluminescence (PL) peaks of InXGa1-XN/GaN quantum wells (QWs) shift initially towards red which is...

Authors: Chao Yang Li, Yong Gang Wang

Abstract: We demonstrated an experiment of femtosecond-laser damage threshold on GaAs wafer, the damage threshold was measured from 50 to 400fs. The...


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