Semiconductor Photonics: Nano-Structured Materials and Devices

Volume 31

doi: 10.4028/www.scientific.net/AMR.31

Paper Title Page

Authors: C.B. Tay, Soo Jin Chua

Abstract: We show that the rod-like morphology of hydrothermally-grown ZnO nanorods can be obtained on any substrate, pre-coated with ZnO...

199
Authors: Shahrum Abdullah, Z. Endut, I. Ahmad, Azman Jalar, Suhaila M. Yusof

Abstract: Nowadays, die attach film (DAF) gaining popularity in microelectronic packaging as integral part in facilitating the growth of wafer level...

202
Authors: Tetsuya Mizumoto, Yoichi Akano, Kazuhiko Tamura, Masaki Yoshimura

Abstract: A pump-induced refractive index change was measured in a passive GaInAsP waveguide together with its temporal response. Also, the temporal...

206
Authors: V. Dixit, H.F. Liu, N. Xiang

Abstract: Blueshifts of photoluminescence (PL) peak wavelength from GaInNAs/GaAs quantum well (QW) at various annealing temperatures have been...

209
Authors: S. Anandan, Y. Ikuma, T. Kudoh, Y. Ogita, V. Murugesan

Abstract: In the present study, La-doped TiO2 and ZnO nano particles were synthesized and extensively characterized by various sophisticated...

212
Authors: S. Kuntharin, S. Sanorpim, T. Nakamura, R. Katayama, Kentaro Onabe

Abstract: We have investigated effect of the In- and N-rich growth conditions on the structural modification of cubic-phase InN (c-InN) films grown...

215
Authors: S. Sanorpim, F. Nakajima, R. Katayama, Kentaro Onabe

Abstract: The high quality GaAsN epitaxial films with the typical thickness of 150-200 nm and the N contents up to 5.5% were grown by MOVPE. The...

218
Authors: S. Sanorpim, P. Kongjaeng, R. Katayama, Kentaro Onabe

Abstract: The use of an InGaAs buffer layer was applied to the growth of thick InxGa1-xAs1-yNy layers with higher In contents (x > 30%). In order to...

221
Authors: S. Sanorpim, D. Kaewket, Sukkaneste Tungasmita, R. Katayama, Kentaro Onabe

Abstract: Optical transitions in the In0.050Ga0.950P0.975N0.025/GaP lattice-matched single quantum wells (SQWs) with different well widths (LZ = 1.6...

224
Authors: C.B. Soh, H. Hartono, S.Y. Chow, Soo Jin Chua

Abstract: Nanoporous GaN template has been fabricated by electrochemical etching to give hexagonal pits with nano-scale pores of size 20-50 nm in the...

227

Showing 61 to 70 of 75 Paper Titles