Semiconductor Photonics: Nano-Structured Materials and Devices

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Authors: Didier Decoster, Michele Carette, Marie Lesecq, D. Lauvernier, Malek Zegaoui, Dorothee Bernard, Jean Pierre Vilcot, Jean Chazelas
Abstract: In this paper, we propose to take advantage of specific properties of nanophotonics to achieve microwave functions which are difficult to get with more conventional ways. With this goal, we developed new technologies to fabricate III-V nanowaveguides. Two ways were explored: the first one by deep etching of conventional epitaxies and the second one by embedding nanowires in polymer. We show in this paper some results on first devices mainly based on nanowires embedded in polymer.
Authors: Mahi R. Singh
Abstract: We have studied the quantum information processing phenomenon in photonic crystals doped with four-level nanoparticles. This phenomenon occurs due to the switching mechanism in the system. We consider that one of the transition energies of nanoparticles is coupled near resonantly with a photonic band gap edge. The dipole-dipole interaction between the nanoparticles has also been included. It is found that the system switches between the transparent and nontransparent states due to the dipole-dipole interaction and the band edge coupling. This is an interesting finding and can be used to produce logical photon switches in the quantum information processing.
Authors: Mahi R. Singh
Abstract: We have study the phenomenon on of phase transition in photonic band gap (PBG) materials doped with four-level nanoparticles in the presence of the dipole-dipole interaction. Numerical simulations for the real susceptibility have been performed for an isotropic PBG material. It is found that the real susceptibility has a singularity for a certain value of the nanostructure concentration. This is a signature of the phase transition in the system.
Authors: H. Yang, M.K. Chin, Desmond C.S. Lim, S.Y. Lee, C.W. Lee, H.L. Zhu
Abstract: An InGaAsP/InP Electroabsorption Modulator (EAM) with single-sided large optical cavity (LOC) was studied and fabricated by low-pressure Metal Organic Chemical Vapor Deposition (MOCVD). Results show that the optical profile of EAM is greatly improved by the LOC structure, which is expected to increase the coupling efficiency and the optical saturation power.
Authors: Priyanka Singh, Shailesh N. Sharma, G. Bhagavannarayana, M. Husain, M. Lal
Abstract: Porous silicon (PS) layers were formed by anodization on polished substrates of (1 0 0) Si at different current densities for a fixed anodization time of 30 mins. using different screenprinted/ evaporated back contacts (Ag, Al) respectively. The PS films has been characterized by high resolution X-ray diffraction (HRXRD), photoluminescence (PL), Scanning Electron Microscopy (SEM) and Fourier Transform Infrared (FTIR) techniques respectively. Porosity and thickness of PS layers were estimated by gravimetric analysis. The properties of PS formed using screen-printed Ag & Al as the back contacts (SP-(Ag/Al)) was found to be superior as compared to the corresponding films with evaporated back contacts (EV-(Ag/Al)). The PS formed with screenprinted Ag & Al-back contacts shows better crystalline perfection, higher stability, higher PL efficiency and negligible PL decay compared to that formed with evaporated Ag & Al- as the back contact for the same current density and time of anodization.

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