Abstract: In this paper, we propose to take advantage of specific properties of nanophotonics to
achieve microwave functions which are difficult to get with more conventional ways. With this
goal, we developed new technologies to fabricate III-V nanowaveguides. Two ways were explored:
the first one by deep etching of conventional epitaxies and the second one by embedding nanowires
in polymer. We show in this paper some results on first devices mainly based on nanowires
embedded in polymer.
Abstract: We have studied the quantum information processing phenomenon in photonic crystals
doped with four-level nanoparticles. This phenomenon occurs due to the switching mechanism in
the system. We consider that one of the transition energies of nanoparticles is coupled near
resonantly with a photonic band gap edge. The dipole-dipole interaction between the nanoparticles
has also been included. It is found that the system switches between the transparent and
nontransparent states due to the dipole-dipole interaction and the band edge coupling. This is an
interesting finding and can be used to produce logical photon switches in the quantum information
Abstract: We have study the phenomenon on of phase transition in photonic band gap (PBG)
materials doped with four-level nanoparticles in the presence of the dipole-dipole interaction.
Numerical simulations for the real susceptibility have been performed for an isotropic PBG
material. It is found that the real susceptibility has a singularity for a certain value of the
nanostructure concentration. This is a signature of the phase transition in the system.
Abstract: An InGaAsP/InP Electroabsorption Modulator (EAM) with single-sided large optical
cavity (LOC) was studied and fabricated by low-pressure Metal Organic Chemical Vapor
Deposition (MOCVD). Results show that the optical profile of EAM is greatly improved by the
LOC structure, which is expected to increase the coupling efficiency and the optical saturation
Abstract: Porous silicon (PS) layers were formed by anodization on polished substrates of (1 0 0)
Si at different current densities for a fixed anodization time of 30 mins. using different screenprinted/
evaporated back contacts (Ag, Al) respectively. The PS films has been characterized by
high resolution X-ray diffraction (HRXRD), photoluminescence (PL), Scanning Electron
Microscopy (SEM) and Fourier Transform Infrared (FTIR) techniques respectively. Porosity and
thickness of PS layers were estimated by gravimetric analysis. The properties of PS formed using
screen-printed Ag & Al as the back contacts (SP-(Ag/Al)) was found to be superior as compared to
the corresponding films with evaporated back contacts (EV-(Ag/Al)). The PS formed with screenprinted
Ag & Al-back contacts shows better crystalline perfection, higher stability, higher PL
efficiency and negligible PL decay compared to that formed with evaporated Ag & Al- as the back
contact for the same current density and time of anodization.