Analysis of the Main Parameters in the Chemical Mechanical Polishing Process
This paper studies the chemical mechanical polishing (CMP) of the wafer's material such as stainless steel, monocrystalline silicon etc, and analyzes how the technological parameters’ impact on the final wafer’s surface material removal rate, surface quality and surface damage like the polishing pad’s speed and the wafer speed, polishing pressure and polishing time.The results show that: when the difference between the polishing pad's rotation speed and the wafer's rotation speed is small and their directions are the same , then the material removal rate of the wafer is larger.when the polishing pressure is selected between 5 to 6.5 kPa, the wafer surface's damage is smaller.The polishing time also play a very important role and affect the surface quality and surface damage of the wafer after polishing.
X. D. Yang et al., "Analysis of the Main Parameters in the Chemical Mechanical Polishing Process", Advanced Materials Research, Vols. 317-319, pp. 29-33, 2011