Analysis of the Main Parameters in the Chemical Mechanical Polishing Process


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This paper studies the chemical mechanical polishing (CMP) of the wafer's material such as stainless steel, monocrystalline silicon etc, and analyzes how the technological parameters’ impact on the final wafer’s surface material removal rate, surface quality and surface damage like the polishing pad’s speed and the wafer speed, polishing pressure and polishing time.The results show that: when the difference between the polishing pad's rotation speed and the wafer's rotation speed is small and their directions are the same , then the material removal rate of the wafer is larger.when the polishing pressure is selected between 5 to 6.5 kPa, the wafer surface's damage is smaller.The polishing time also play a very important role and affect the surface quality and surface damage of the wafer after polishing.



Advanced Materials Research (Volumes 317-319)

Edited by:

Xin Chen




X. D. Yang et al., "Analysis of the Main Parameters in the Chemical Mechanical Polishing Process", Advanced Materials Research, Vols. 317-319, pp. 29-33, 2011

Online since:

August 2011




[1] Walsh J, Herzog A H. Process for polishing semiconductor materials: U.S. Patent, 3170273 (1965).

[2] Renton P. Chemical-mechanical planarization: fundamental issues of inter level dielectric applications. Meet Sold State Sci. Technology Stub section Proc (1992).

[3] Jian Gu, Zhengxing Li, Youwu zhao etc, Coal mine machinery, 27(8): 39, ( 2006) ( In Chinese).

[4] Baochun Zhong. Electronic industrial specialized equipment, 36(1) (2007) (In Chinese).

[5] Yuhui Sun, Renke Kang etc. Equipment for electronic product manufacturing. 114: 34-39 (2005) (In Chinese).

[6] Feiyan lou. The numerical simulation and experimental study of the polishing liquid membrane's characteristics in CMP. Zhejiang University of Technology. (2009). ( In Chinese). ( PhD thesis).

[7] Jianzhong Jiang. The mechanism of materials adsorption removal in the chip's chemical mechanical polishing process. Jiannan university (2009). (In Chinese). (PhD thesis).

[8] Preston F. Soc Glass Technology, (11): 214-256 (1927).

[9] S.R. Runnels, L.M. Eyman. J. Electrochem. Soc. 141(6): 1468-1701 ( 1994).

[10] S. Sundararajan, D.G. Thakurta et al. J. Electrochem Soc, 146(2): 761-766. (1999).

[11] Taichang Zhang. Manufacturing technology and machine tools, 4: 24-27. ( 2000) ( In Chinese).

[12] Zheng You. Journal of Astronautic Metrology and Measurement, 12: 14-18 (1998). ( In Chinese).