Advances in Innovative Materials and Applications

Volume 324

doi: 10.4028/

Paper Title Page

Authors: Anne Pépin, Patrick Bernier, Michel Lannoo

Abstract: This talk is intended to give an overview of research in Nanoscience and Nanotechnology (N&N) in France and especially at the French...

Authors: Vincenzo Guarino, Antonio Gloria, Marco A. Alvarez-Perez, Maria Grazia Raucci, Valentina Cirillo, Alfredo Ronca, Roberto De Santis, Luigi Ambrosio

Abstract: In order to mimic the behaviors of natural tissue, the optimal approach for designing novel biomaterials has to be inspired to nature...

Authors: Gabriel Ferro

Abstract: In this paper, the issues related to in-situ doping of silicon carbide (SiC) semiconductor during epitaxial growth are reviewed. Some of...

Authors: Jose Miguel Martin-Martinez

Abstract: Adhesives have been used in the footwear industry as an alternative to sewing or application of nails, staples or tacks to bond several...

Authors: Joël Patarin

Abstract: Nanoporous solids characterized by a narrow pore size distribution such as zeolites (aluminosilicates) and related materials (other...

Authors: Sabine Bertho, Wibren D. Oosterbaan, Veerle Vrindts, Jean Christophe Bolsée, Fortunato Piersimoni, Donato Spoltore, Jan D'Haen, Laurence Lutsen, Dirk Vanderzande, Jean V. Manca

Abstract: The use of nanostructured non-conventional semiconductors such as conjugated polymers and metal oxides (e.g. TiO2), opens...

Authors: Recep Vatansever, Harun Mindivan, E.S. Kayali

Abstract: In this work, the re-use of aluminum AA6061 chips and fly ash particles by solid-state processes (cryomilling, cold compaction and hot...

Authors: Nikolaos Nikolaou, Panagiotis Dimitrakis, Pascal Normand, Vassilios Ioannou-Sougleridis, Konstantinos Giannakopoulos, Konstantina Mergia, Kaupo Kukli, Jaakko Niinisto, Mikko Ritala, Markku Leskela

Abstract: In this work we report on the structural and electrical properties of SiO2/Si3N4/HfO2 memory stacks with...

Authors: Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Herve Morel, Dominique Planson

Abstract: Progress in semiconductor technologies have been so consequent these last years that theoretical limits of silicon, speci cally in the eld...


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