Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes

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The effects of post fabrication annealing on the electrical characteristics of n-ZnO/p-Si heterostructure are studied. The nanorods of ZnO are grown by aqueous chemical growth (ACG) technique on p-Si substrate and ohmic contacts of Al/Pt and Al are made on ZnO and Si. The devices are annealed at 400 and 600 °C in air, oxygen and nitrogen ambient. The characteristics are studied by photoluminescence (PL), current–voltage (I-V) and capacitance - voltage (C-V) measurements. PL spectra indicated higher ultraviolet (UV) to visible emission ratio with a strong peak of near band edge emission (NBE) centered from 375-380 nm and very weak broad deep-level emissions (DLE) centered from 510-580 nm. All diodes show typical non linear rectifying behavior as characterized by I-V measurements. The results indicated that annealing in air and oxygen resulted in better electrical characteristics with a decrease in the reverse current.

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Periodical:

Edited by:

Maher Soueidan, Mohamad Roumié and Pierre Masri

Pages:

233-236

DOI:

10.4028/www.scientific.net/AMR.324.233

Citation:

S. M. Faraz et al., "Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes", Advanced Materials Research, Vol. 324, pp. 233-236, 2011

Online since:

August 2011

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$35.00

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