On the Characterization of Boron in BGaAs Nano-Films Using IBA Techniques

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In this work, the capability of the proton Induced γ-ray Emission (PIGE) technique to monitor a rapid, nondestructive and quantification of Boron in ultra-thin films of BxGa1-xAs deposited on GaAs substrate using MOCVD is discussed. In order to improve the sensitivity for B detection, a systematic study was undertaken using proton induced beam at three different energies (from 1.7, 2.4 and 3 MeV) with different tilting angles (0, 60° and 80°). Best conditions were found to be at 1.7 MeV and at 80° for proton energy and tilting angle within ten minutes of acquisition time.

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Periodical:

Edited by:

Maher Soueidan, Mohamad Roumié and Pierre Masri

Pages:

314-317

DOI:

10.4028/www.scientific.net/AMR.324.314

Citation:

S. Abboudy et al., "On the Characterization of Boron in BGaAs Nano-Films Using IBA Techniques", Advanced Materials Research, Vol. 324, pp. 314-317, 2011

Online since:

August 2011

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$35.00

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