On the Characterization of Boron in BGaAs Nano-Films Using IBA Techniques
In this work, the capability of the proton Induced γ-ray Emission (PIGE) technique to monitor a rapid, nondestructive and quantification of Boron in ultra-thin films of BxGa1-xAs deposited on GaAs substrate using MOCVD is discussed. In order to improve the sensitivity for B detection, a systematic study was undertaken using proton induced beam at three different energies (from 1.7, 2.4 and 3 MeV) with different tilting angles (0, 60° and 80°). Best conditions were found to be at 1.7 MeV and at 80° for proton energy and tilting angle within ten minutes of acquisition time.
Maher Soueidan, Mohamad Roumié and Pierre Masri
S. Abboudy et al., "On the Characterization of Boron in BGaAs Nano-Films Using IBA Techniques", Advanced Materials Research, Vol. 324, pp. 314-317, 2011