Low-Temperature Joining Technique as Interconnection Technology for Power Electronics


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There is a demand for higher junction temperatures in power devices, but the existing packaging technology is limiting the power cycling capability if the junction temperature is increased. Limiting factors are solder interconnections and bond wires. With Replacing the chip-substrate soldering by low temperature joining technique, the power cycling capability of power modules can be increased widely. Replacing also the bond wires and using a double-sided low temperature joining technique, a further significant increase in the life-time of power devices is achieved.



Edited by:

Maher Soueidan, Mohamad Roumié and Pierre Masri






R. Amro "Low-Temperature Joining Technique as Interconnection Technology for Power Electronics", Advanced Materials Research, Vol. 324, pp. 437-440, 2011

Online since:

August 2011





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DOI: 10.1109/28.67536

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