Compliance at the GaSb/GaP Interface by Misfit Dislocations Array


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We study the initial growth of 10 monolayers (MLs) of GaSb on a (001) GaP substrate. Transmission electron microscopy and reflection high energy electron diffraction analysis show that an Sb-rich GaP surface promotes the formation of a 90° misfit dislocation array at the epi-substrate interface. Using atomic force microscopy, we investigate the influence of the growth temperature and the growth rate on the formation and the shape of GaSb islands.



Edited by:

Maher Soueidan, Mohamad Roumié and Pierre Masri




S. El Kazzi et al., "Compliance at the GaSb/GaP Interface by Misfit Dislocations Array", Advanced Materials Research, Vol. 324, pp. 85-88, 2011

Online since:

August 2011




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