Compliance at the GaSb/GaP Interface by Misfit Dislocations Array
We study the initial growth of 10 monolayers (MLs) of GaSb on a (001) GaP substrate. Transmission electron microscopy and reflection high energy electron diffraction analysis show that an Sb-rich GaP surface promotes the formation of a 90° misfit dislocation array at the epi-substrate interface. Using atomic force microscopy, we investigate the influence of the growth temperature and the growth rate on the formation and the shape of GaSb islands.
Maher Soueidan, Mohamad Roumié and Pierre Masri
S. El Kazzi et al., "Compliance at the GaSb/GaP Interface by Misfit Dislocations Array", Advanced Materials Research, Vol. 324, pp. 85-88, 2011