The Role of CdS Buffer Layer in ZnO Nanowire Arrays/SnS Thin Film Solar Cells

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SnS is a promising p-type semiconductor material for low-cost and low-toxic solar cells due to its exciting properties, such as high absorption in the visible range, little toxicity, inexpensiveness, and so on. The CdS nano-layer used as buffer layer of ZnO nanowire arrays/CdS/SnS thin film solar cells was prepared by thermal evaporation method. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM), UV-Vis spectra, Hall effect measurement system and I-V measurement system were used to characterize the ZnO nanowire arrays/CdS/SnS thin film solar cells. It is found that the CdS nano-layer plays a key role in reducing the leakage current.

Info:

Periodical:

Advanced Materials Research (Volumes 335-336)

Edited by:

Yun-Hae Kim, Prasad Yarlagadda, Xiaodong Zhang and Zhijiu Ai

Pages:

1402-1405

DOI:

10.4028/www.scientific.net/AMR.335-336.1402

Citation:

Z. Hu et al., "The Role of CdS Buffer Layer in ZnO Nanowire Arrays/SnS Thin Film Solar Cells", Advanced Materials Research, Vols. 335-336, pp. 1402-1405, 2011

Online since:

September 2011

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$38.00

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