Preparation and Characterization of ZnO Nanowire Arrays Grown on Different ZnO Seed Layers by Hydrothermal Method


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Due to its suitable band gap, low cost, environmental friendliness, and high electron mobility, ZnO, naturally n-type semiconductor with a wide bandgap (Eg = 3.37 eV), is widely studied, as a window layer of heterojunction solar cells. In this study, the ZnO nanowire arrays were grown on the different ZnO seed layers by hydrothermal method. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-Vis spectra were used to characterize the ZnO nanowire arrays. The results indicate the seed layer can effect the size distribution, density, crystal structure and optical properties of the nanowire arrays.



Advanced Materials Research (Volumes 335-336)

Edited by:

Yun-Hae Kim, Prasad Yarlagadda, Xiaodong Zhang and Zhijiu Ai






S. Liu et al., "Preparation and Characterization of ZnO Nanowire Arrays Grown on Different ZnO Seed Layers by Hydrothermal Method", Advanced Materials Research, Vols. 335-336, pp. 519-522, 2011

Online since:

September 2011




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DOI: 10.1002/adma.201001455

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