Influence of Ar/O2 Ratio on the Prpoperties of Transparent Conducting ZnO:Zr Films Deposited by DC Reactive Magnetron Sputtering

Abstract:

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Transparent conducting ZnO:Zr thin films were deposited on glass substrates by DC reactive magnetron sputtering in Ar+O2 ambience with different Ar/O2 ratios. The structural, electrical and optical properties of ZnO:Zr films were analyzed by X-ray diffraction, four-point probe measurements and UV–vis spectrophotometers. When Ar/O2 ratio increases from 20:1 to 25:1, the resistivity significantly decreases because of the improvement of the crystallinity. However, with further increase in Ar/O2 ratio, the crystallinity begins to deteriorate resulting in an increase in the resistivity. The films deposited at the optimum Ar/O2 ratio of 25:1 have the minimum resistivity of 1.4×10-3 Ω•cm and a high transmittance of above 92%.

Info:

Periodical:

Advanced Materials Research (Volumes 335-336)

Edited by:

Yun-Hae Kim, Prasad Yarlagadda, Xiaodong Zhang and Zhijiu Ai

Pages:

964-967

DOI:

10.4028/www.scientific.net/AMR.335-336.964

Citation:

H. F. Zhang and X. F. Wang, "Influence of Ar/O2 Ratio on the Prpoperties of Transparent Conducting ZnO:Zr Films Deposited by DC Reactive Magnetron Sputtering", Advanced Materials Research, Vols. 335-336, pp. 964-967, 2011

Online since:

September 2011

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$35.00

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