Nucleation Mechanism for Epitaxial Graphene on Si-Terminated SiC (0001) Surfaces

Abstract:

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The nucleation mechanism during the epitaxial graphene films on Si-terminated SiC (0001) surfaces was investigated by atomic force microscopy (AFM) and Raman scattering spectrum. By imaging the change of Si-terminated SiC substrate surfaces, we observed the process of the initial nucleation and the wrinkle formation of graphene. The nucleation of epitaxial graphene phase initiates at 1450°C and the wrinkle formation depends on the thermal decomposition time.

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Periodical:

Edited by:

Xiaodong Zhang, Zhijiu Ai, Prasad Yarlagadda and Yun-Hae Kim

Pages:

530-533

DOI:

10.4028/www.scientific.net/AMR.338.530

Citation:

Q. B. Liu et al., "Nucleation Mechanism for Epitaxial Graphene on Si-Terminated SiC (0001) Surfaces", Advanced Materials Research, Vol. 338, pp. 530-533, 2011

Online since:

September 2011

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$35.00

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DOI: 10.1007/s12274-008-8036-1

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