Smooth GaAs (110) Surface Fabrication Using the Ga-Assisted Deoxidation Method

Abstract:

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We have practiced the Ga-assisted deoxidation method on GaAs(110) surface. When the deposit amount of Ga is suitable, flat GaAs(110) surface without any thermal deoxidation induced pits and excrescent GaAs islands obtained with the Ga-assisted deoxidation method. The obtained results suggested that, 9ML Ga was optimized dose for GaAs(110) surface, which is a little more than GaAs(001) surface indicating a thicker oxide layer of GaAs(110) surface.

Info:

Periodical:

Advanced Materials Research (Volumes 341-342)

Edited by:

Liu Guiping

Pages:

138-141

DOI:

10.4028/www.scientific.net/AMR.341-342.138

Citation:

J. Q. Liu et al., "Smooth GaAs (110) Surface Fabrication Using the Ga-Assisted Deoxidation Method", Advanced Materials Research, Vols. 341-342, pp. 138-141, 2012

Online since:

September 2011

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Price:

$35.00

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