Study on the P-Type Doping of AlGaN/GaN Superlattice for Blue LED

Abstract:

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We studied the relationship of the superlattice structure with the doping efficiency in detail by semi-classic calculation and follow experiment. The results show that period length of about 9nm and Al content of 30% is optimal. The Hall, AFM and PL measurement show that the best annealing temperature under atmosphere is about 540°C to 580°C. Finally we obtained the sample with resistivity of 0.31Ω·cm. It can be used for fabricating p type ohmic contact and active layer for blue LED.

Info:

Periodical:

Advanced Materials Research (Volumes 343-344)

Edited by:

David Wang

Pages:

97-100

DOI:

10.4028/www.scientific.net/AMR.343-344.97

Citation:

J. F. Chen "Study on the P-Type Doping of AlGaN/GaN Superlattice for Blue LED", Advanced Materials Research, Vols. 343-344, pp. 97-100, 2012

Online since:

September 2011

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$35.00

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