Sn, Al and Cu not only possess electromagnetic interference shield efficiency, but also have the acceptable costs. In this study, sputtered Sn-Al thin films and Sn-Cu thin film were used to investigate the effect of the crystallization mechanism and film thickness on the electromagnetic interference (EMI) characteristics. In addition, the annealed microstructure, electrical conductivity and EMI of the Sn-xAl films and the Sn-xCu films were compared. The results show that Sn-Al film increased the electromagnetic interference (EMI) shielding after annealed. Sn-Cu films with higher Cu atomic concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu content possessed excellent EMI shielding at lower frequencies, but had an inverse tendency at higher frequencies.