Improved Extraction of the Local Carrier Generation Lifetime from Forward Diode Characteristics


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This paper is proposed to extract the local carrier generation lifetime from forward current-voltage (I-V) characteristics of p-n junctions in case of non-uniform defects. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The forward I-V and high frequency capacitance-voltage (C-V) characteristics of p-n junctions have been measured. The recombination current density can be extracted from the area forward current density by subtracting with the area diffusion current density. Form the recombination current density, the local generation and recombination lifetime can be obtained.



Advanced Materials Research (Volumes 378-379)

Edited by:

Brendan Gan, Yu Gan and Y. Yu




W. Pengchan et al., "Improved Extraction of the Local Carrier Generation Lifetime from Forward Diode Characteristics", Advanced Materials Research, Vols. 378-379, pp. 593-596, 2012

Online since:

October 2011




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